Cu(In,Al)Se2 thin films by one-step electrodeposition for photovoltaics
Identifieur interne : 000168 ( Main/Repository ); précédent : 000167; suivant : 000169Cu(In,Al)Se2 thin films by one-step electrodeposition for photovoltaics
Auteurs : RBID : Pascal:14-0094835Descripteurs français
- Pascal (Inist)
- Couche mince, Dépôt électrolytique, Dispositif photovoltaïque, Indium, Bande interdite, Propriété électronique, Recuit, Composition phase, Cellule solaire, Profil profondeur, Spectre photoélectron RX, Précurseur, Conductivité type p, Conductivité type n, Cuivre, Chalcopyrite, Aluminium, Cuivre Indium Séléniure Mixte, Propriété électrique, Substrat acier inoxydable, In, CuInSe2, CuAlSe2, 8115P, 8460J, 7320, 6855N.
- Wicri :
English descriptors
- KwdEn :
- Aluminium, Annealing, Chalcopyrite, Copper, Copper Indium Selenides Mixed, Depth profiles, Electrical properties, Electrodeposition, Electronic properties, Energy gap, Indium, N type conductivity, P type conductivity, Phase composition, Photovoltaic cell, Precursor, Solar cells, Thin films, X-ray photoelectron spectra.
Abstract
Chalcopyrite Cu(In,Al)Se2 (CIAS) thin films are grown on stainless steel substrate through one-step electrodeposition at room temperature. Indium is partially replaced with aluminum to increase the band gap of CuInSe2 without creating significant change in the original structure. The deposition potential is optimized at -0.8 V (vs. SCE) and annealing of the films is performed in vacuum to remove binary phases present in the as-deposited films. In/Al ratio is varied from 1/9 to 8/2, to find the suitability for solar cell fabrication. For In/Al ratio of less than 8/2, CuAlSe2 phase is formed in the film in addition to the CIAS phase. Depth profile X-ray photoelectron spectroscopy analysis of the CIAS sample prepared with In/Al ratio of 8/2 in the precursor solution confirmed the existence of single phase CIAS throughout the film. This film showed p-type conductivity while the rest of the samples with In/Al ratio less than 8/2 showed n-type conductivity. The band gap of the film varied from 1.06 to 1.45 eV, with variation in deposition potential. Structural, optical, morphological, compositional and electrical characterizations are carried out to establish the suitability of this film for solar cell fabrication.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Cu(In,Al)Se<sub>2</sub> thin films by one-step electrodeposition for photovoltaics</title><author><name sortKey="Deepa, K G" uniqKey="Deepa K">K. G. Deepa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Instrumentation and Applied Physics, Indian Institute of Science</s1><s2>Bangalore 560012</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Bangalore 560012</wicri:noRegion></affiliation></author><author><name sortKey="Lakshmi Shruthi, N" uniqKey="Lakshmi Shruthi N">N. Lakshmi Shruthi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Instrumentation and Applied Physics, Indian Institute of Science</s1><s2>Bangalore 560012</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Bangalore 560012</wicri:noRegion></affiliation></author><author><name sortKey="Anantha Sunil, M" uniqKey="Anantha Sunil M">M. Anantha Sunil</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Instrumentation and Applied Physics, Indian Institute of Science</s1><s2>Bangalore 560012</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Bangalore 560012</wicri:noRegion></affiliation></author><author><name sortKey="Nagaraju, J" uniqKey="Nagaraju J">J. Nagaraju</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Instrumentation and Applied Physics, Indian Institute of Science</s1><s2>Bangalore 560012</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Bangalore 560012</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0094835</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0094835 INIST</idno><idno type="RBID">Pascal:14-0094835</idno><idno type="wicri:Area/Main/Corpus">000044</idno><idno type="wicri:Area/Main/Repository">000168</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium</term><term>Annealing</term><term>Chalcopyrite</term><term>Copper</term><term>Copper Indium Selenides Mixed</term><term>Depth profiles</term><term>Electrical properties</term><term>Electrodeposition</term><term>Electronic properties</term><term>Energy gap</term><term>Indium</term><term>N type conductivity</term><term>P type conductivity</term><term>Phase composition</term><term>Photovoltaic cell</term><term>Precursor</term><term>Solar cells</term><term>Thin films</term><term>X-ray photoelectron spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term><term>Dépôt électrolytique</term><term>Dispositif photovoltaïque</term><term>Indium</term><term>Bande interdite</term><term>Propriété électronique</term><term>Recuit</term><term>Composition phase</term><term>Cellule solaire</term><term>Profil profondeur</term><term>Spectre photoélectron RX</term><term>Précurseur</term><term>Conductivité type p</term><term>Conductivité type n</term><term>Cuivre</term><term>Chalcopyrite</term><term>Aluminium</term><term>Cuivre Indium Séléniure Mixte</term><term>Propriété électrique</term><term>Substrat acier inoxydable</term><term>In</term><term>CuInSe2</term><term>CuAlSe2</term><term>8115P</term><term>8460J</term><term>7320</term><term>6855N</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term><term>Aluminium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Chalcopyrite Cu(In,Al)Se<sub>2</sub> (CIAS) thin films are grown on stainless steel substrate through one-step electrodeposition at room temperature. Indium is partially replaced with aluminum to increase the band gap of CuInSe<sub>2</sub> without creating significant change in the original structure. The deposition potential is optimized at -0.8 V (vs. SCE) and annealing of the films is performed in vacuum to remove binary phases present in the as-deposited films. In/Al ratio is varied from 1/9 to 8/2, to find the suitability for solar cell fabrication. For In/Al ratio of less than 8/2, CuAlSe<sub>2</sub> phase is formed in the film in addition to the CIAS phase. Depth profile X-ray photoelectron spectroscopy analysis of the CIAS sample prepared with In/Al ratio of 8/2 in the precursor solution confirmed the existence of single phase CIAS throughout the film. This film showed p-type conductivity while the rest of the samples with In/Al ratio less than 8/2 showed n-type conductivity. The band gap of the film varied from 1.06 to 1.45 eV, with variation in deposition potential. Structural, optical, morphological, compositional and electrical characterizations are carried out to establish the suitability of this film for solar cell fabrication.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>551</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Cu(In,Al)Se<sub>2</sub> thin films by one-step electrodeposition for photovoltaics</s1></fA08><fA11 i1="01" i2="1"><s1>DEEPA (K. G.)</s1></fA11><fA11 i1="02" i2="1"><s1>LAKSHMI SHRUTHI (N.)</s1></fA11><fA11 i1="03" i2="1"><s1>ANANTHA SUNIL (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>NAGARAJU (J.)</s1></fA11><fA14 i1="01"><s1>Department of Instrumentation and Applied Physics, Indian Institute of Science</s1><s2>Bangalore 560012</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>1-7</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000505786250010</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0094835</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Chalcopyrite Cu(In,Al)Se<sub>2</sub> (CIAS) thin films are grown on stainless steel substrate through one-step electrodeposition at room temperature. Indium is partially replaced with aluminum to increase the band gap of CuInSe<sub>2</sub> without creating significant change in the original structure. The deposition potential is optimized at -0.8 V (vs. SCE) and annealing of the films is performed in vacuum to remove binary phases present in the as-deposited films. In/Al ratio is varied from 1/9 to 8/2, to find the suitability for solar cell fabrication. For In/Al ratio of less than 8/2, CuAlSe<sub>2</sub> phase is formed in the film in addition to the CIAS phase. Depth profile X-ray photoelectron spectroscopy analysis of the CIAS sample prepared with In/Al ratio of 8/2 in the precursor solution confirmed the existence of single phase CIAS throughout the film. This film showed p-type conductivity while the rest of the samples with In/Al ratio less than 8/2 showed n-type conductivity. The band gap of the film varied from 1.06 to 1.45 eV, with variation in deposition potential. Structural, optical, morphological, compositional and electrical characterizations are carried out to establish the suitability of this film for solar cell fabrication.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15P</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C20</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H55N</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Couche mince</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Thin films</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Dépôt électrolytique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electrodeposition</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Dispositif photovoltaïque</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Photovoltaic cell</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Dispositivo fotovoltaico</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Bande interdite</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Energy gap</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Propriété électronique</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Electronic properties</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Propiedad electrónica</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Recuit</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Annealing</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Composition phase</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Phase composition</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Composición fase</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Solar cells</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Profil profondeur</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Depth profiles</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Précurseur</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Precursor</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Conductivité type p</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>P type conductivity</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Conductividad tipo p</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Conductivité type n</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>N type conductivity</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Conductividad tipo n</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Aluminium</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Aluminium</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Cuivre Indium Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Copper Indium Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>29</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Electrical properties</s0><s5>29</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Substrat acier inoxydable</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>In</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>CuAlSe2</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>8115P</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>7320</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>6855N</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>132</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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